Detection and characterization of multi-filament evolution during resistive switching

Abstract

We report resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes and present a technique which enables the characterization of the evolution of multiple filaments within a single device during switching, including their temperature, heat flow, conductivity, and time evolving areas. Using a geometrically defined equivalent circuit, we resolve the individual current/voltage values of each filament and demonstrate that the switching curves of each filament collapse onto a common curve determined by the analytical steady-state resistive switching solution for filamentary switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.