Applied Physics Letters · 2013 · 22 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsThin FilmsNanostructured Electronic MaterialsSurface PhysicsThin Film Electrical PropertiesElectron ScatteringElectron Transport In NanostructuresFilm ThicknessHall ConductivityHall EffectHall Effect MeasurementsSize Effects
We report the Hall effect measured in gold films evaporated onto mica substrates, the samples having an average grain diameter D that ranges between 12 and 174 nm, and a thickness t of approximately 50 nm and 100 nm. The Hall mobility was determined at low temperatures T (4 K ≤ T ≤ 50 K). By tuning the grain size during sample preparation, we discriminate whether the dominant collision mechanism controlling the resistivity of the samples at 4 K is electron-surface or electron-grain boundary scattering, based upon whether the Hall mobility depends linearly on film thickness t or on grain diameter D.
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Surface and grain-boundary scattering in nanometric Cu films
Tik Sun, Bo Yao, Andrew P. Warren et al. · Physical Review B · 2010 · 222 citations · Full text
Electron scattering at surfaces and grain boundaries in Cu thin films and wires
J. S. Chawla, Florian Gstrein, James Clarke et al. · Physical Review B · 2011 · 195 citations