Journal of Applied Physics · 1991 · 38 citations · 28 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceMetalsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSurface PhysicsElectron Energy-loss SpectroscopyLow-energy Electron SpectroscopyLow-temperature MaterialsMetal-semiconductor InterfacesMonolayer FilmsSemiconductor CharacterizationSurface StatesWork Function
The Cs/GaAs(100) system is studied by Auger electron spectroscopy, electron energy-loss spectroscopy, work function change measurements, low-energy electron diffraction, and thermal desorption spectroscopy at 200 K and at room temperature. At room temperature the Cs layer is nonmetallic; at low temperature there is clear evidence for metallization after completion of the first monolayer.
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Electron Energy-Loss Spectroscopy of GaAs and Ge Surfaces
R. Ludeke, L. Esaki · Physical Review Letters · 1974 · 137 citations