Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells - Concepedia

Concepedia

Publication | Closed Access

Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells

57

Citations

31

References

1995

Year

S. Bürkner, Matthias Maier, E.C. Larkins, W. Rothemund, Eoin P. O’Reilly, J.D. Ralston

Journal of Electronic Materials

EngineeringPhysicsProcess Parameter DependenceIntrinsic ImpurityApplied PhysicsImpurity-free InterdiffusionCondensed Matter PhysicsCompound Semiconductor

References

	Year	Citations

Page 1