Concepedia

W. Rothemund

WR

Statistics

Publications

22

Citations

610

H-Index

16

Active since

1964

Affiliations

Fraunhofer Institute for Applied Solid State Physics(Current)

W. Rothemund is an author at Fraunhofer Institute for Applied Solid State Physics specializing in materials science, semiconductor materials, and engineering.

Publications per year

1964–1997

22

Publications

22

Resolved donor-acceptor pair-recombination lines in diamond luminescence

B. Dischler, W. Rothemund, C. Wild et al. · Physical review. B, Condensed matter · 1994 · 74 citations

, , +13

Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells

S. Bürkner, Matthias Maier, E.C. Larkins et al. · Journal of Electronic Materials · 1995 · 57 citations

, , +16

Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed Al<i>x</i>Ga<i>y</i>In1−<i>x</i>−<i>y</i>As buffer layers on GaAs

Matthias Haupt, K. Köhler, P. Ganser et al. · Applied Physics Letters · 1996 · 49 citations

, , +17

Boron ion implantation in Hg1−<i>x</i>Cd<i>x</i>Te

J. Baars, A. Hurrle, W. Rothemund et al. · Journal of Applied Physics · 1982 · 46 citations

, , +15

Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements

C. R. Fritzsche, W. Rothemund · Journal of The Electrochemical Society · 1972 · 34 citations · Full text

, , +17

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