P. Ganser

Statistics

Publications

Citations

670

H-Index

Active since

1982

Affiliations

Fraunhofer Institute for Applied Solid State Physics(Current)

University of Würzburg

AT&T (United States)

P. Ganser is an author at Fraunhofer Institute for Applied Solid State Physics specializing in semiconductor materials, materials science, and semiconductor physics.

Publications per year

1982–2005

Publications

N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering

J. Wagner, T. Geppert, K. Köhler et al. · Journal of Applied Physics · 2001 · 78 citations

Natural Sciences, Materials Science, Physics +17

Comparison of Si δ-doping with homogeneous doping in GaAs

K. Köhler, P. Ganser, Matthias Maier · Journal of Crystal Growth · 1993 · 56 citations

Engineering, Electrical Engineering, Materials Science +12

Preferential formation of Al–N bonds in low N-content AlGaAsN

T. Geppert, J. Wagner, K. Köhler et al. · Applied Physics Letters · 2002 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +7

Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs

Matthias Haupt, K. Köhler, P. Ganser et al. · Applied Physics Letters · 1996 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Dissipative dynamics of an electronic wavepacket in a semiconductor double well potential

Karl Leo, Jagdeep Shah, T. C. Damen et al. · IEEE Journal of Quantum Electronics · 1992 · 44 citations

Natural Sciences, Physics, Condensed Matter Physics +16

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