Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe

Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions

H. R. Vydyanath, J. Ellsworth, C. Devaney · Journal of Electronic Materials · 1987 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +11

Liquid Phase Growth of HgCdTe Epitaxial Layers

C. C. Wang, S. H. Shin, M. Chu et al. · Journal of The Electrochemical Society · 1980 · 70 citations

Engineering, Materials Engineering, Materials Science +17

Long and middle wavelength infrared photodiodes fabricated with Hg1−<i>x</i> Cd<i>x</i>Te grown by molecular-beam epitaxy

J. M. Arias, S. H. Shin, J. G. Pasko et al. · Journal of Applied Physics · 1989 · 70 citations

Engineering, Materials Engineering, Materials Science +17

The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts

M. H. Kalisher · Journal of Crystal Growth · 1984 · 62 citations

Natural Sciences, Materials Science, Physics +14

Molecular-beam epitaxy growth and <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> arsenic doping of <i>p</i>-on-<i>n</i> HgCdTe heterojunctions

Jose M. Arias, M. Zandian, J. G. Pasko et al. · Journal of Applied Physics · 1991 · 61 citations

Engineering, Electrical Engineering, Materials Science +17