Concepedia

Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy

Alexandre Arnoult, F. González‐Posada, Stéphanie Blanc, Véronique Bardinal, C. Fontaine

Physica E Low-dimensional Systems and Nanostructures · 2004 · 13 citations · 5 references

DOI

Concepts

References

5

Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments

E. V. K. Rao, A. Ougazzaden, Y. Le Bellégo et al. · Applied Physics Letters · 1998 · 174 citations

, , +17

Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors

Shengbai Zhang, Alex Zunger · Applied Physics Letters · 1997 · 91 citations

, , +17

RF plasma investigations for plasma-assisted MBE growth of (Ga,In)(As,N) materials

H. Carrère, Alexandre Arnoult, A. Ricard et al. · Journal of Crystal Growth · 2002 · 45 citations

, , +12

Reflection high-energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A

M.R. Fahy, K. Sato, B.A. Joyce · Applied Physics Letters · 1994 · 40 citations

, , +16

The homoepitaxial growth of GaAs(111)A and (111)B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions

D. A. Woolf, D.I. Westwood, R. H. Williams · Semiconductor Science and Technology · 1993 · 39 citations

, , +17