Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodes

Deactivation of the boron acceptor in silicon by hydrogen

Chih‐Tang Sah, Jack Yuan-Chen Sun, Joseph Jeng-Tao Tzou · Applied Physics Letters · 1983 · 320 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

N. M. Johnson · Physical review. B, Condensed matter · 1985 · 238 citations

Natural Sciences, Materials Science, Physics +17

Neutralization of acceptors in silicon by atomic hydrogen

J. I. Pánkové, R. O. Wance, J. E. Berkeyheiser · Applied Physics Letters · 1984 · 221 citations

Natural Sciences, Materials Science, Physics +9

The influence of debye length on the C-V measurement of doping profiles

W. C. Johnson, P.T. Panousis · IEEE Transactions on Electron Devices · 1971 · 199 citations

Engineering, Electrical Engineering, Materials Science +17

Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon

A. J. Tavendale, D. Alexiev, A. Williams · Applied Physics Letters · 1985 · 153 citations

Engineering, Electrical Engineering, Materials Science +16