Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon

Abstract

Field drift of the hydrogen-related, acceptor-neutralizing defect has been detected in reverse-biased Schottky barrier and junction diodes made from plasma-hydrogenated, p-type, boron-doped silicon. Significant differences in diffusion depths and drift rates between hydrogenated and deuterated silicon indicate that the mobile neutralizing species is possibly uncomplexed monoatomic hydrogen with a donor level above the mid band gap. Hydrogen-boron pairing explains qualitatively the boron acceptor concentration profiles in hydrogen-neutralized, p-type silicon.