J.C. Müller

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

T. Zundel, A. Mesli, J.C. Müller et al. · Applied Physics A · 1989 · 51 citations

Ion Implantation, Engineering, Physics +10

Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing

Bouchaíb Hartiti, A. Slaoui, J.C. Müller et al. · Journal of Applied Physics · 1992 · 50 citations

Shallow Junctions, Engineering, Optoelectronic Devices +16

On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon

W. O. Adekoya, J.C. Müller, P. Siffert · Journal of Applied Physics · 1988 · 43 citations

Materials Science, Epitaxial Growth, Electronic Devices +14

Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

C. Scharager, J.C. Müller, R. Stuck et al. · physica status solidi (a) · 1975 · 39 citations

Electrical Engineering, Deep Levels, Radiation Detection +12

Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

D. Mathiot, A. Lachiq, A. Slaoui et al. · Materials Science in Semiconductor Processing · 1998 · 38 citations

Materials Science, Spintronics, Spin-on Doped Glass +10