Publication | Closed Access
Process and properties of Pt/Pb(Zr, Ti)O<sub>3</sub>/Pt integrated ferroelectric capacitors
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Citations
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References
1997
Year
Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryFerroelectric ApplicationMemory DeviceMemory DevicesFerroelectric MemoriesOne-mask-patterned Ferroelectric CapacitorsMaterials ScienceMaterials EngineeringElectrical EngineeringElectronic MemoryMicroelectronicsMemory ReliabilityOxygen Plasma TreatmentMicrofabricationApplied PhysicsFerroelectric CapacitorsFerroelectric MaterialsSemiconductor MemoryThin FilmsFunctional Materials
Abstract A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.
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