Electronics Letters · 1983 · 23 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsDevice CharacterizationLeakage Power ReductionMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsGrain Boundary BehaviorLoadPassivation LayersPassivation TechniquesPolysiliconStatic Cmos Circuits
p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.
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