IEICE Transactions on Electronics · 2010 · 20 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesPlasmonic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsTerahertz PhotonicsHeterostructure DevicesHeterostructure MaterialsHeterostructure OptoelectronicsQuality Factor OptimizationTerahertz GenerationTerahertz Semiconductor DevicesTerahertz Sources
We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
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Cutting-edge terahertz technology
Masayoshi Tonouchi · Nature Photonics · 2007 · 6.2K citations
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations