Applied Physics Letters · 1984 · 52 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsPhotonicsSemiconductor DevicesEtching ProcessesLaser OpticsLaser PhysicsLaser Surface ProcessingPhotonic MaterialsSemiconductor LasersAnisotropic EtchingDevice FabricationDry EtchingEtchingPhotochemical ProductionPhotochemical ReactionsSingle-crystal SemiconductorsWet Etching
UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features <1 μm have been made.
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William H. Pence, Steven L. Baughcum, Stephen R. Leone · The Journal of Physical Chemistry · 1981 · 128 citations