Concepedia

Laser-induced microscopic etching of GaAs and InP

D. J. Ehrlich, Richard M. Osgood, Thomas F. Deutsch

Applied Physics Letters · 1980 · 109 citations · 5 references

DOI

Concepts

Abstract

Ultraviolet laser photolysis of methyl-halides has been used to produce localized photoetching of GaAs and InP. A spatial resolution of ≃1μm has been achieved and an etch rate ≳104 times that of the dark reaction demonstrated. A chemical mechanism is proposed and the observed resolution is explained by a simple physical model.

References

5

Laser photodeposition of metal films with microscopic features

Thomas F. Deutsch, D. J. Ehrlich, Richard M. Osgood · Applied Physics Letters · 1979 · 178 citations

, , +17

Selective Photoetching of Gallium Arsenide

F. Kuhn-Kuhnenfeld · Journal of The Electrochemical Society · 1972 · 72 citations

, , +17

On the Recombination of Iodine and Bromine Atoms

O. K. Rice · The Journal of Chemical Physics · 1941 · 42 citations

, , +17

A preliminary study of dislocations in indium and gallium phosphides

R.C. Clarke, D. S. Robertson, A. W. Vere · Journal of Materials Science · 1973 · 34 citations

, , +14

Effect of the laser radiation intensity on the kinetics of the heterogeneous photochemical reaction between single-crystal germanium and bromine gas

I. M. Beterov, V. P. Chebotaev, N I Yurshina et al. · Soviet Journal of Quantum Electronics · 1978 · 27 citations

, , +13