Electrical characteristics and memory behavior of Ge3N4GaAs MIS devices

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 671 citations

Engineering, Electrical Engineering, Materials Science +17

Interface states on semiconductor/insulator surfaces

A. Goetzberger, E. Klausmann, Max J. Schulz · C R C Critical Reviews in Solid State Sciences · 1976 · 188 citations

Natural Sciences, Materials Science, Physics +16

Physical limitations on the frequency response of a semiconductor surface inversion layer

S.R. Hofstein, G. Warfield · Solid-State Electronics · 1965 · 146 citations

Engineering, Electrical Engineering, Materials Science +12

Perspectives on III–V compound MIS structures

H. Wieder · Journal of Vacuum Science and Technology · 1978 · 120 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide

Carl R. Zeisse, L. Messick, D. L. Lile · Journal of Vacuum Science and Technology · 1977 · 82 citations

Natural Sciences, Electrical Engineering, Materials Science +17