Deposition of Amorphous GaN by Compound Source Molecular Beam Epitaxy for Electroluminescent Devices

Abstract

Amorphous GaN films were deposited using compound source MBE. GaN powder was used as the source material and no additional nitrogen sources were supplied. Although the N/Ga ratio in the layers deposited at temperatures lower than 400 °C was low, an increase of the substrate temperature improved the N/Ga ratio. The emission peaks of their photoluminescence spectra originated around the band edge of hexagonal GaN. Electroluminescent devices based on amorphous GaN were fabricated and were found to show UV emission. Amorphous GaN is one of the candidate materials for light-emitting devices operating in the UV to the blue spectral regions.