Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Takayoshi Takano, Yoshinobu Narita, Akihiko Horiuchi, +1

Applied Physics Letters

Laser Processing (Laser Material Processing)Optical MaterialsEngineeringLaser ScienceLaser Applications +20

GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength

Katsuyuki Utaka, Y. Suematsu, Kenichi Kobayashi, +1

Japanese Journal of Applied Physics

PhotonicsOptical MaterialsEngineeringLaser ScienceOptical Properties +9

Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region

Hideo Kawanishi, Masanori Senuma, Mao Yamamoto, +2

Applied Physics Letters

Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringDeep-ultraviolet Spectral Region +14

Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers

Hideo Kawanishi, Masanori Senuma, Takeaki Nukui

Applied Physics Letters

PhotonicsSpontaneous Edge EmissionsEdge EmissionsEngineeringPhysics +10

Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure

Katsumi Kishino, Y. Suematsu, Katsuyuki Utaka, +1

Japanese Journal of Applied Physics

PhotonicsEngineeringTwin-guide StructureLaser ScienceDevice Integration +2

Refractive indices of B _<i>x</i> Al _{1− <i>x</i>} N ( <i>x</i> = 0–0.012) and B _<i>y</i> Ga _{1− <i>y</i>} N ( <i>y</i> = 0–0.023) epitaxial layers in ultraviolet region

Shunsuke Watanabe, Takayohi Takano, Keisuke Jinen, +2

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Wide-bandgap SemiconductorAluminium NitrideShort Wavelength OpticOptical MaterialsEngineering +19

Band-Gap Energy and Effective Mass of BGaN

Tohru Honda, Masao Shibata, Makoto Kurimoto, +3

Japanese Journal of Applied Physics

SemiconductorsBgan LayersElectrical EngineeringElectronic DevicesEngineering +10

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission

Takayoshi Takano, Makoto Kurimoto, Jun Yamamoto, +1

Journal of Crystal Growth

Materials EngineeringMaterials ScienceAluminium NitrideEngineeringDeep-uv Emission +5

Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy

Yoshiyuki Ishihara, Jun Yamamoto, Makoto Kurimoto, +3

Japanese Journal of Applied Physics

Aluminium NitrideEngineeringSevere Plastic DeformationCrystal QualityMolecular Beam Epitaxy +14

Violet and Near-UV Light Emission from GaN/Al_0.08Ga_0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

Yuichiro Kuga Yuichiro Kuga, Toshio Shirai Toshio Shirai, Makiko Haruyama Makiko Haruyama, +2

Japanese Journal of Applied Physics

Materials ScienceElectrical EngineeringNear-uv Light EmissionEngineeringOptoelectronic Materials +11