Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRecord Breakdown VoltagesGan Power Devices +7

Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Takayoshi Takano, Yoshinobu Narita, Akihiko Horiuchi, +1

Applied Physics Letters

Laser Processing (Laser Material Processing)Optical MaterialsEngineeringLaser ScienceLaser Applications +20

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringHigh Voltage EngineeringHigh Avalanche CapabilityApplied Physics +7

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Avalanche CapabilitiesApplied Physics +10

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Hajime Fujikura, Taichiro Konno, Takeshi Kimura, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Fumimasa Horikiri, Hiroshi Ohta, Naomi Asai, +3

Applied Physics Express

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringDeep Trench Structures +12

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida

Japanese Journal of Applied Physics

Materials EngineeringDamageless Trench FabricationElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

Hajime Fujikura, Kentaro Hayashi, Fumimasa Horikiri, +5

Applied Physics Express

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +8

Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source

Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, +7

Applied Physics Express

Environmental ElectrochemistryDamage-free Pec EtchingEngineeringChemistryChemical Engineering +20

Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultra-Violet Region

Takayoshi Takano, Yasuyuki Ohtaki, Yoshinobu Narita, +1

Japanese Journal of Applied Physics

Materials SciencePhotonicsWide-bandgap SemiconductorOptical MaterialsAlgan Mqw Layers +13