Yoshinobu Narita

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2015 · 215 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Takayoshi Takano, Yoshinobu Narita, Akihiko Horiuchi et al. · Applied Physics Letters · 2004 · 147 citations

Laser Processing (Laser Material Processing), Optical Materials, Engineering +22

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri et al. · Japanese Journal of Applied Physics · 2019 · 58 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2019 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Hajime Fujikura, Taichiro Konno, Takeshi Kimura et al. · Applied Physics Letters · 2020 · 57 citations

Materials Science, Semiconductors, Electrical Engineering +14