Applied Physics Letters · 2006 · 74 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor SurfacesSurface PhysicsSurface SpectroscopyAnisotropic Electrical PropertiesAnisotropic Surface PropertiesGallium Nitride (Gan) MaterialsHeterostructure DevicesOptical PropertiesQuantum Well HeterostructuresQuantum Well StructuresValence Band Structure
We studied the anisotropic optical properties of c-plane AlxGa1−xN multiple quantum wells and m-plane AlxGa1−xN single layer grown on a SiC substrate. Very weak surface emission was detected from c-plane samples with x=0.66–0.76 (emission wavelength of 228–240nm), although strong surface emission was detected from c-plane samples with x=0–0.41 (280–365nm) and m-plane samples with x=0–0.76 (240–365nm). These results indicate that crystal-field splitoff hole valence band plays an important role in (E‖c) polarization and isotropic emissions from AlxGa1−xN with x≧0.5.
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Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
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