Applied Physics Letters · 1986 · 22 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface EngineeringSurface ScienceDevice CharacterizationEtching ProcessesRaman SpectroscopySemiconductor Device MaterialsSurface PhysicsThin Film EtchingDegradationEtch ChemistryEtch DamageEtch MechanismsIndium PhosphideIon Beam EtchingPlasma EtchingSurface Etching
A new method of Ar ion beam etching of InP using a LN2 cooled sample holder is described. Smooth and low-damage etched surfaces have been obtained using this technique. Auger electron spectroscopy measurements and laser Raman spectroscopy analysis indicated that the morphology degradation was significantly reduced.
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