Microwave and Optical Technology Letters · 2006 · 15 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationDevice ModelingHigh-frequency Semiconductor DevicesMicrowave MeasurementsMicrowave Semiconductor DevicesNonlinear Circuit AnalysisActive Device ModelingGaas Microwave Integrated CircuitsLarge-signal Device ModelingMicrowave Circuit ModelingMicrowave ModelingNonlinear Device CharacterizationSmall-signal Device Modeling
Abstract In this paper, a simple and effective method of extracting the values of the parameters of the Angelov nonlinear I(V) model of GaAs HJ‐FETs is presented. In the proposed method, the coefficients of the function ψ are determined from I(V) pulse measurements, using the least‐squares optimization method. The utility of the proposed method is demonstrated by modeling the I(V) characteristic of the different families of packaged medium‐power GaAs HJ‐FETs designed for mobile communications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1046–1050, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21596
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GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 518 citations