Active Device Modeling

Active Device Modeling is a methodology in microwave device simulation that characterizes the nonlinear behavior of active components, such as transistors, under large-signal and small-signal operating conditions, distinguishing it from passive device modeling by its focus on internal gain, power generation, and signal amplification mechanisms.

194

Publications

7.8K

Citations

580

Authors

243

Institutions

Publications per year

2017–2026

21

Authors

580

  1. FG
    F. Giannini

    University of Rome Tor Vergata, Italy

    7 publications · 360 citations

    7

    h-index

  2. DE
    David E. Root

    Broad Institute, United States

    6 publications · 202 citations

    6

    h-index

  3. DS
    Dominique Schreurs

    KU Leuven, Belgium

    5 publications · 118 citations

    5

    h-index

  4. RQ
    Raymond Quéré

    Université de Limoges, France

    5 publications · 118 citations

    5

    h-index

  5. PC
    Paolo Colantonio

    University of Rome Tor Vergata, Italy

    5 publications · 302 citations

    5

    h-index

1–5 of 580

Venues

  1. 20

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  2. IEEE Microwave and Wireless Components Letters

    9 publications · 319 citations

    9

    h-index

  3. IEEE Microwave and Guided Wave Letters

    8 publications · 405 citations

    8

    h-index

  4. Electronics Letters

    5 publications · 90 citations

    5

    h-index

  5. 5

    h-index

1–5