IEEE Electron Device Letters · 1985 · 16 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsModulationSemiconductor PhysicsDoped SemiconductorsDoping Effects On Device PerformanceModulation DopingSemiconductor CharacterizationSemiconductor Device ModelingSilicon
A new study showing that Lehovec and Zuleeg analysis for silicon FET's can be extended to the GaAs FET's is presented. An analytical model that effectively predicts the characteristics of the MODFET is introduced. The agreement between the model and the experimental data appears to be very good.