Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots

Abstract

We report evidence for the existence of anticorrelation in InGaAs∕GaAs self-assembled quantum dots (QDs). We found that, as a function of the spacer layer thickness, the QDs between the neighboring layers are either vertically correlated (at small spacer thickness) or anticorrelated (at larger spacer thickness). Moreover, in the case when the QDs are antialigned, the size distribution of individual quantum dots becomes more uniform. The implications of this work to the fundamental understanding of the self-assembly process, and the technological applications are discussed.