Physical Review Letters · 1996 · 1.2K citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsNanoelectronicsNanostructured Electronic MaterialsQuantum DotsSelf-assembled NanostructuresSemiconductor NanomaterialsSemiconductor PhysicsIsland Size EffectsMultilayer MaterialsNanocrystal HeterostructuresQuantum Dot ArraysQuantum Dot DevicesQuantum Dot SuperlatticesQuantum Dots SuperlatticesSemiconductor Quantum Dots
Island arrangements vary between layers rather than repeating identically. The study investigates the growth of multilayer arrays of coherently strained islands that could function as quantum dots in electronic devices. A simple model shows that vertical correlation between islands leads to progressive uniformity in size and spacing, resulting in a self‑organized, more regular 3‑D arrangement that could provide the size uniformity needed for quantum‑dot electronic applications.
We investigate the growth of multilayer arrays of coherently strained islands, which may serve as ``quantum dots'' in electronic devices. A simple model reproduces the observed vertical correlation between islands in successive layers. However, the arrangement of islands is not simply repeated from layer to layer. Instead, the island size and spacing grow progressively more uniform. In effect, the structure ``self-organizes'' into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
12
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations
Natural Sciences, Materials Engineering, Materials Science +17
Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
Qianghua Xie, A. Madhukar, Ping Chen et al. · Physical Review Letters · 1995 · 1.3K citations
Natural Sciences, Materials Science, Condensed Matter Physics +16
Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations