Sridhar Govindaraju

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots

X.-D. Wang, N. Liu, Chih‐Kang Shih et al. · Applied Physics Letters · 2004 · 47 citations

Natural Sciences, Materials Science, Physics +14

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing

B. Sell, Seungchan An, Jeffrey L. Armstrong et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 43 citations

Engineering, Electrical Engineering, High-performance Computing +17

Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

D. Gotthold, Sridhar Govindaraju, Terry J. Mattord et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 23 citations

Natural Sciences, Materials Science, Physics +14

Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN

Jason M. Reifsnider, Sridhar Govindaraju, A.L. Holmes · Journal of Crystal Growth · 2002 · 21 citations

Natural Sciences, Materials Science, Physics +13