Jason M. Reifsnider

Statistics

Publications

Citations

116

H-Index

Active since

1998

Affiliations

The University of Texas at Austin(Current)

Stanford University

Samsung (United States)

Jason M. Reifsnider is an author at The University of Texas at Austin specializing in materials science, electronic materials, and semiconductor devices.

Publications per year

1998–2007

Publications

Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN

Jason M. Reifsnider, Sridhar Govindaraju, A.L. Holmes · Journal of Crystal Growth · 2002 · 21 citations

Natural Sciences, Materials Science, Physics +13

Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

S. Wang, T. Li, Jason M. Reifsnider et al. · IEEE Journal of Quantum Electronics · 2000 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Improved quality GaN films grown by molecular beam epitaxy on sapphire

Jason M. Reifsnider, D. Gotthold, A.L. Holmes et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 17 citations

Engineering, Materials Engineering, Materials Science +17

Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Michael M. Oye, Terry J. Mattord, G. A. Hallock et al. · Applied Physics Letters · 2007 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +14

Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers

Michael M. Oye, Sridhar Govindaraju, R. Sidhu et al. · Applied Physics Letters · 2005 · 12 citations

Engineering, Materials Science, Physics +17

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