Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers

Abstract

In this article, we discuss two indium diffusion mechanisms that are present during the rapid thermal annealing of InxGa1−xAs quantum wells (x=0.18, 0.22, and 0.26) with GaNyAs1−y barriers (y=0.6 or 1.2%). Samples were grown with and without a GaAs spacer layer in between the quantum well and barrier. The dominant mechanism is dependent on the amount of thermal energy applied during the annealing process. At low annealing times and temperatures, we have observed that In-Ga intra-diffusion entirely within the quantum well is dominant. For the higher times and temperatures, In-Ga inter-diffusion between the quantum well and barrier becomes dominant. These observations were confirmed by high-resolution x-ray diffraction and the peak emission wavelengths were measured by room-temperature photoluminescence. We have also observed that nitrogen had diffused from the GaNAs barriers into the InGaAs quantum wells in all of our annealed samples. In addition, the commonly observed indium-content dependent diffusion in GaInNAs-based systems was not observed with InGaAs∕GaNAs-based structures.