Terry J. Mattord

Growth of Al _0.3 Ga _0.7 As by molecular beam epitaxy in the forbidden temperature range using As ₂

L. P. Erickson, Terry J. Mattord, P. W. Palmberg et al. · Electronics Letters · 1983 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

D. Gotthold, Sridhar Govindaraju, Terry J. Mattord et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 23 citations

Natural Sciences, Materials Science, Physics +14

Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

Michael M. Oye, Davood Shahrjerdi, Injo Ok et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 18 citations

Engineering, Electrical Engineering, Materials Science +15

Real-time flux monitoring and feedback control of a valved arsenic source

Terry J. Mattord, K. Sadra, A. Srinivasan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 15 citations

Engineering, Chemical Engineering, Instrumentation +14

Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Michael M. Oye, Terry J. Mattord, G. A. Hallock et al. · Applied Physics Letters · 2007 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +14