Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods

The identification of molecular spectra

Journal of the Franklin Institute · 1951 · 2.3K citations

Molecular Spectroscopy, Biochemistry, Molecular Spectra +8

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 316 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 188 citations

Materials Science, Gan Film Quality, Electrical Engineering +13

Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy

O. Brandt, Hui Yang, B. Jenichen et al. · Physical review. B, Condensed matter · 1995 · 165 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +13

X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3<i>d</i>states in GaN

Walter R. L. Lambrecht, B. Segall, S. Strite et al. · Physical review. B, Condensed matter · 1994 · 105 citations

Total Energy, Wide-bandgap Semiconductor, Engineering +17