Applied Physics Letters · 2005 · 47 citations · 23 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsPlasma PhysicsSurface ScienceLaser-plasma InteractionsSemiconductor HeterostructuresMolecular Beam EpitaxyMolecular Beam Epitaxy Kinetics
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation G. Koblmüller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, J. S. Speck; Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Appl. Phys. Lett. 24 January 2005; 86 (4): 041908. https://doi.org/10.1063/1.1853530 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Dislocation mediated surface morphology of GaN
B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 407 citations
Natural Sciences, Materials Engineering, Materials Science +17