Applied Physics Letters · 2006 · 10 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsRelaxation MechanismsSpin DynamicsTime-resolved SpectroscopyElectron Spin RelaxationExcitonsReflectanceRelaxation Time MeasurementsRelaxation TimesSpin RelaxationSpin Relaxation MechanismsTemperature Dependence
The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15–50K have a single exponential component corresponding to the electron spin relaxation time of 1.40–1.14ps. The spin relaxation time is found to be proportional to T−0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)].
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations