Correction factor in the split C–V method for mobility measurements

Charge accumulation and mobility in thin dielectric MOS transistors

C.G. Sodini, T.W. Ekstedt, J.L. Moll · Solid-State Electronics · 1982 · 315 citations

Engineering, Electrical Engineering, Materials Science +14

Investigation of the MOST channel conductance in weak inversion

J.J.M. Koomen · Solid-State Electronics · 1973 · 174 citations · Full text

Natural Sciences, Electrical Engineering, Physics +4

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

Mong-Song Liang, Jeong Yeol Choi, Ping-Keung Ko et al. · IEEE Transactions on Electron Devices · 1986 · 151 citations

Engineering, Electrical Engineering, Materials Science +17

Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K

Cheng‐Liang Huang, G. Gildenblat · IEEE Transactions on Electron Devices · 1990 · 99 citations

Engineering, Electrical Engineering, Microelectronics +16

A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's

P.-M.D. Chow, Kang-Lung Wang · IEEE Transactions on Electron Devices · 1986 · 78 citations

Engineering, Electrical Engineering, Microelectronics +16