Composition control of GaAsP grown by molecular beam epitaxy

Crystal growth '78

I.J. Saunders · Physics Bulletin · 1979 · 369 citations

Materials Science, Materials Engineering, Engineering +11

Molecular-beam epitaxy (MBE) of In1−<i>x</i>Ga<i>x</i>As and GaSb1−<i>y</i>As<i>y</i>

Chin‐An Chang, R. Ludeke, L. L. Chang et al. · Applied Physics Letters · 1977 · 206 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +14

Thermodynamic analysis of molecular beam epitaxy of III–V semiconductors

Hisashi Seki, Akinori Koukitu · Journal of Crystal Growth · 1986 · 109 citations

Semiconductors, Thermodynamic Analysis, Engineering +4

Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE

C. T. Foxon, B.A. Joyce, M. T. Norris · Journal of Crystal Growth · 1980 · 99 citations

Materials Science, Materials Engineering, Engineering +10

Molecular Beam Epitaxy of GaP and GaAs_1-<i>x</i>P_<i>x</i>

Yuichi Matsushima, Shun‐ichi Gonda · Japanese Journal of Applied Physics · 1976 · 37 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +14