Molecular Beam Epitaxy of GaP and GaAs_1-<i>x</i>P_<i>x</i>

Abstract

GaP and GaAs1-xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560∼600°C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1-xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease, -dx/dTs, is found to be 0.003°C-1 for the entire composition-ratio range.