Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar

Band gap versus composition and demonstration of Vegard’s law for In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to InP

R. E. Nahory, M. A. Pollack, W. D. Johnston et al. · Applied Physics Letters · 1978 · 415 citations

Natural Sciences, Materials Science, Physics +16

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

M. B. Panish, H. Temkin, R. A. Hamm et al. · Applied Physics Letters · 1986 · 92 citations

Engineering, Materials Engineering, Materials Science +17

LPE growth of high purity InP and In1−Ga P1−Asy

E. Kuphal, A. Pöcker · Journal of Crystal Growth · 1982 · 48 citations

Engineering, Materials Engineering, Materials Science +13

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose et al. · Journal of Electronic Materials · 1986 · 35 citations

Engineering, Materials Engineering, Materials Science +12

Vapor-phase growth of (In,Ga)(As,P) quaternary alloys

Gregory L. Olsen, T.J. Zamerowski · IEEE Journal of Quantum Electronics · 1981 · 34 citations

Engineering, Materials Engineering, Materials Science +17