Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Abstract

Single quantum wells of GaInAs and GaInAsP isolated by 150-Å-thick InP barriers have been grown by gas source molecular beam epitaxy. The quantum wells ranged in thickness from 5 to 30 Å. Photoluminescence and transmission electron microscopy were used to characterize them. Intense luminescence was observed at low temperature even from the thinnest of the wells. The spectral shifts due to the quantum size effect were 450 meV for the quaternary 5-Å well and 534 meV for the ternary 5-Å well. The latter constitutes approximately 85% of the total band-gap discontinuity. The emission linewidths suggest that on a scale larger than the exciton diameter the interface fluctuates less than one monolayer.