A. Pöcker

LPE growth of high purity InP and In1−Ga P1−Asy

E. Kuphal, A. Pöcker · Journal of Crystal Growth · 1982 · 48 citations

Engineering, Materials Engineering, Materials Science +13

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

E. Kuphal, A. Schlachetzki, A. Pöcker · Applied Physics B · 1978 · 22 citations

Engineering, Electrical Engineering, Materials Science +14

Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor-phase epitaxy InGaAs/InP

E. Kuphal, A. Pöcker, A. Eisenbach · Journal of Applied Physics · 1993 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

MBE grown strain-compensated AlGaInAs/AlGaInAs/InPMQW laser structures

Hartmut Hillmer, R. Lösch, F. Steinhagen et al. · Electronics Letters · 1995 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Phase Diagram for Metalorganic Vapor Phase Epitaxy of Strained and Unstrained InGaAsP/InP

E. Kuphal, A. Pöcker · Japanese Journal of Applied Physics · 1998 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +17