Concepedia

MBE grown strain-compensated AlGaInAs/AlGaInAs/InPMQW laser structures

Hartmut Hillmer, R. Lösch, F. Steinhagen, W. Schlapp, A. Pöcker, H. Burkhard

Electronics Letters · 1995 · 20 citations · 8 references

DOI

Concepts

Abstract

Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells were grown by molecular beam epitaxy (MBE) and characterised by photoluminescence and X-ray diffraction. Our structures show very low threshold currents of 4 mA and high AM modulation bandwidths of 21 GHz.

References

8

High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations

, , +17

Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple quantum well stacks

R.W. Glew, K. Scarrott, A. Briggs et al. · Journal of Crystal Growth · 1994 · 30 citations

, , +11

AlGaInAs/InP 1.5 µm MQW DFB laser diodesexceeding 20 GHz bandwidth

F. Steinhagen, Hartmut Hillmer, R. Lösch et al. · Electronics Letters · 1995 · 18 citations

, , +1

Zero-net-strain multiquantum well lasers

C.P. Seltzer, S.D. Perrin, M.C. Tatham et al. · Electronics Letters · 1991 · 17 citations

, , +17

Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio

A. Hamoudi, A. Ougazzaden, Ph. Krauz et al. · Applied Physics Letters · 1995 · 15 citations

, , +17