MBE grown strain-compensated AlGaInAs/AlGaInAs/InPMQW laser structures

Abstract

Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells were grown by molecular beam epitaxy (MBE) and characterised by photoluminescence and X-ray diffraction. Our structures show very low threshold currents of 4 mA and high AM modulation bandwidths of 21 GHz.