Two-band conduction in TiO2

Abstract

The contribution of electrons and holes to the electrical conduction of titanium dioxide TiO2 in the Si/TiO2/Al structure is determined in experiments on the injection of minority carriers from n-type and p-type silicon layers. It is established that both electrons and holes contribute to electrical conduction of the titanium dioxide layer in the Si/TiO2/Al structure; i.e., the electrical conduction of titanium dioxide has a two-band nature.