V.G. Lifshits - Concepedia

Author

V.G. Lifshits

Institute of Automation and Control Processes

Also Known As

V G Lifshits, V LIFSHITS, V. G. LIFSHITS, V. G. Lifshits, V. G. Lifshits, V.G Lifshits, V.G. LIFSHITS, V.G. Lifshits, Victor G. Lifshits

148

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Institute of Automation and Control Processes Russian Academy of Sciences The University of Osaka Vladivostok State University Far Eastern Federal University

About

V.G. Lifshits is an author at Institute of Automation and Control Processes specializing in applied physics, engineering, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	47	1.5K
2	Applied Physics	22	46	1.5K
3	Natural Sciences	7	7	170
4	Chemistry	7	7	148
5	Biology	1	1	16

V.G. Lifshits

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Hydrogen interaction with clean and modified silicon surfaces Kenjiro Oura, V.G. Lifshits, M. Katayama Surface Science Reports EngineeringHydrogen TransitionSilicon On InsulatorSurface ScienceApplied Physics	1999	214
Formation of the ordered array of Al magic clusters on Si(111)7×7 V.G. Kotlyar, T.V. Kasyanova, M. A. Cherevik, Physical review. B, Condensed matter Aluminium NitrideEngineeringNanoclusterOrdered ArrayGroup Iii Metals	2002	123
Surface phases on silicon V.G. Lifshits, Yu. L. Gavrilyuk, D. A. Tsukanov Physics-Uspekhi Surface PhasesEngineeringPhysicsSurface ScienceApplied Physics	2000	106
Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study V.G. Lifshits Surface Science Materials ScienceMaterials EngineeringEngineeringLeed-aes StudyApplied Physics	1988	82
Family of the metal-induced Si(111)3×1 reconstructions with a top Si atom density of 4/3 monolayer V.G. Lifshits, M. Katayama, Kenjiro Oura Surface Science Materials ScienceSurface CharacterizationEngineeringCrystalline DefectsSurface Science	1999	63
Mg-induced Si(111)-(3×2) reconstruction studied by scanning tunneling microscopy Osamu Kubo, Jeong-Tak Ryu, H. Tani, Surface Science EngineeringTunneling MicroscopyCrystalline DefectsMicroscopyScanning Probe Microscopy	1998	52
Phase transition and stability of Si(1 1 1)–8 × `2'-In surface phase at low temperatures Serguei V. Ryjkov, Tadaaki Nagao, V.G. Lifshits, Surface Science SemiconductorsMaterials ScienceSurface CharacterizationLow TemperaturesEngineering	2001	51
Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions V.G. Lifshits, Jeong-Tak Ryu, Osamu Kubo, Physical review. B, Condensed matter EngineeringMicroscopyComputer-aided DesignSilicon On InsulatorTunneling Microscopy	1999	51
Structural model for the Si(111)-4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>×</mml:mo></mml:math>1-In reconstruction K.V. Ignatovich, V.G. Lifshits, Tomoyuki Numata, Physical review. B, Condensed matter Materials ScienceEngineeringIndium AtomsPhysicsCrystalline Defects	1997	48
Restructuring process of the Si(111) surface upon Ca deposition V.G. Lifshits, K.V. Ignatovich, H. Bethge, Surface Science Materials ScienceSurface CharacterizationEngineeringCa DepositionSurface Analysis	2000	46

Page 1