Electronics Letters · 1986 · 21 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesDopingHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsDiamond SemiconductorsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHeat SinksImpatt DiodesMolecular Beam EpitaxyPower OutputSemiconductor Materials For Microwave Devices
GaAs impatt diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1% efficiency at 89.6 GHz was achieved.
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M.G. Adlerstein, S.L.G. Chu · IEEE Electron Device Letters · 1984 · 35 citations
GaAs read-type impatt diode for 130 GHz CW operation
Kai Chang, J. K. Kung, P.G. Asher et al. · Electronics Letters · 1981 · 10 citations