GaAs IMPATT diodes for 60 GHz

Abstract

High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.