Electronics Letters · 1981 · 10 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresGaas Microwave Integrated CircuitsHigh-frequency ElectronicsImpatt DiodesMonolithic Microwave Integrated CircuitsSchottky Barrier DiodesSemiconductor Materials For Microwave Devices
A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.
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M.E. Elta, H.R. Fetterman, W. Macropoulos et al. · IEEE Electron Device Letters · 1980 · 21 citations