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GaAs read-type impatt diode for 130 GHz CW operation
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Citations
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References
1981
Year
Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronicsElectronic EngineeringApplied PhysicsGhz Cw OperationCw OscillationMicroelectronicsOptoelectronicsVapour-phase Epitaxial MaterialSemiconductor Device
A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.
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