Applied Physics Letters · 1980 · 134 citations · 6 references
Electrical EngineeringEngineeringRf SemiconductorPhysicsNanoelectronicsElectronic EngineeringApplied PhysicsMicrowave Time-of-flight TechniqueThin SiDrift VelocityHigh Electric FieldsElectron VelocityMicroelectronicsOptoelectronicsSemiconductor DeviceElectron Physic
A microwave time-of-flight technique was used to measure the drift velocity of electrons in thin Si and GaAs epitaxial layers at very high electric fields. The room-temperature velocity-field characteristic is reported for silicon at fields up to 130 kV/cm, and for GaAs at fields up to 215 kV/cm.
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