Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Engineering, Materials Science, Physics +12

Semiconductor-based heterostructures: Interfacial structure and stability

M.L. Green, J. E. E. Baglin, G. Y. Chin et al. · 1986 · 84 citations

Engineering, Materials Science, Physics +17

Heteroepitaxy of vacuum-evaporated Ge films on single-crystal Si

B-Y. Tsaur, M. W. Geis, John C. C. Fan et al. · Applied Physics Letters · 1981 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Activation energy and spectroscopy of the growth of germanium films by ultraviolet laser-assisted chemical vapor deposition

J. F. Osmundsen, C. C. Abele, J. G. Eden · Journal of Applied Physics · 1985 · 66 citations

Natural Sciences, Chemistry, Materials Science +16

A critical comparison of MOCVD and MBE for heterojunction devices

P.D. Dapkus · Journal of Crystal Growth · 1984 · 53 citations

Engineering, Materials Engineering, Materials Science +14