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Semiconductor-based heterostructures: Interfacial structure and stability
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1986
Year
Unknown Venue
SemiconductorsEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsHgte-cdte SuperlatticesSemiconductor MaterialMultilayer HeterostructuresParameter AnomalyThin FilmsSi Thin FilmsSemiconductor-based HeterostructuresCompound SemiconductorSemiconductor Nanostructures
These proceedings compile the papers presented at a conference on the subject of semiconductor-based heterostructures-stability and interfacial structure. Some of the topics discussed are: In-situ interdiffusion measurements in HgTe-CdTe superlattices; lattice parameter anomaly in an MOCVD CdTe epitaxial layer grown on a GaAs substrate; phase formation in Amorphous W--Si thin films; and properties of ZnO/CuInSe/sub 2/ heterojunctions.