Electronics Letters · 2002 · 47 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ReliabilityLaser DiodesOptoelectronic DevicesQuantum DotsSemiconductor LasersSemiconductor ReliabilityCatastrophic Optical DamageHigh-power Laser DiodesHigh-power Semiconductor LasersMultilayer StacksQuantum Dot Laser DiodesQuantum Dot LasersSemiconductor Laser DiodesSemiconductor Quantum Dots
4.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50°C heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm2 on the front facet.
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High-power quantum-dot lasers at 1100 nm
F. Heinrichsdorff, Ch. Ribbat, Marius Grundmann et al. · Applied Physics Letters · 2000 · 115 citations